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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 900 500 7 10 20 UNIT V V V A A W ae ae Emitter-base voltage Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 90 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 2SC3637 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE TYP. MAX UNIT V 2.0 1.5 10 0.5 1.0 |I V V A mA mA Switching times ts tf Fall time Storage time INC E SEM ANG H VCC=200V;IC=5A; IB1=1A; IB2=-2A OND IC TOR UC 3.0 |I |I 0.1 0.2 s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3637 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3637 CHA IN E SEM NG OND IC TOR UC 4 |
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